EBeam Lithographer

Opportunity overview

The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with Å (sub-1 nm) reading resolution, enabling a stitching accuracy of ±8 nm and overlay accuracy of ±8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (≥2000μm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.

Awarded to

Amounts belong to published awards or contracts. Where several suppliers share one value, it is labelled as shared and is not a supplier-specific allocation.

Classification

• CPV38000000 — Laboratory, optical and precision equipments (excl. glasses)

Lots

• The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with Å (sub-1 nm) reading resolution, enabling a stitching accuracy of ±8 nm and overlay accuracy of ±8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (≥2000μm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.Value not stated